Monolithic 3D III-V HEMT for future communication and quantum computing

被引：0
|
作者：
Kim, Sanghyeon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol KAIST, Seoul, South Korea
来源：
2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2022年
关键词：
D O I：
10.1109/ICICDT56182.2022.9933095
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Recently, monolithic 3-dimensional (M3D) integration has stirred much attention in various applications such as CMOS, RF, image sensors, etc. In terms of the materials, III-V could be promising candidates due to their superior material characteristics and low process temperature, which are important constrain in M3D integration. In this talk, we discuss one of the potential applications of III-V-based M3D including communication and quantum computing.
引用
收藏
页码：XXVI / XXVI
页数：1
相关论文
共 50 条
  • [31] 3D topological quantum computing
    Asselmeyer-Maluga, Torsten
    INTERNATIONAL JOURNAL OF QUANTUM INFORMATION, 2021, 19 (04)
  • [32] 3D Integration for Quantum Computing
    Ishihara, Ryoichi
    2023 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE, 3DIC, 2023,
  • [33] 2D and 3D TCAD Simulation of III-V Channel FETs at the End of Scaling
    Aguirre, P.
    Rau, M.
    Schenk, A.
    2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2018, : 101 - 104
  • [34] 3D interconnects for quantum computing
    Derakhshandeh, Jaber
    Dangol, Anish
    Hussain, Tassawar
    Stegmann, Heiko
    Vadiraj, A. M.
    Dhakras, Prathamesh
    Witters, Thomas
    Shafahian, Ehsan
    Punith, Kumar M. K.
    Gerets, Carine
    Radisic, Aleksandar
    Vaquilar, Aldrin
    Goehnermeier, Aksel
    Wan, Danny
    Miller, Andy
    Jourdain, Anne
    Cherman, Vladimir
    Beyer, Gerald
    Beyne, Eric
    De Greve, Kristiaan
    PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024, 2024, : 821 - 828
  • [35] 2D and 3D TCAD simulation of III-V channel FETs at the end of scaling
    Aguirre, P.
    Rau, M.
    Schenk, A.
    SOLID-STATE ELECTRONICS, 2019, 159 : 123 - 128
  • [36] 2D and 3D all dielectric metamaterials made from III-V semiconductors
    Liu, Sheng
    Keeler, Gordon A.
    Reno, John L.
    Sinclair, Michael B.
    Brener, Igal
    2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [37] Monolithic Integration of III-V on silicon for photonic and electronic applications
    Mauthe, S.
    Schmid, H.
    Mayer, B.
    Wirths, S.
    Convertino, C.
    Baumgartner, Y.
    Czornomaz, L.
    Sousa, M.
    Staudinger, P.
    Riel, H.
    Moselund, K. E.
    2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,
  • [38] Monolithic integration of III-V nanostructures for electronic and photonic applications
    Mayer, B.
    Wirths, S.
    Schmid, H.
    Mauthe, S.
    Convertino, C.
    Baumgartner, Y.
    Czornomaz, L.
    Sousa, M.
    Riel, H.
    Moselund, K. E.
    LOW-DIMENSIONAL MATERIALS AND DEVICES 2017, 2017, 10349
  • [39] A Platform for Monolithic Back End of Line III-V Integration
    Tao, Jun
    Sarkar, Debarghya
    Weng, Sizhe
    Chae, Hyun Uk
    Ahsan, Ragib
    Kapadia, Rehan
    2020 DEVICE RESEARCH CONFERENCE (DRC), 2020,
  • [40] Monolithic III-V Nanowire PV for Photoelectrochemical Hydrogen Generation
    Ba, Xin-Yu
    Pinaud, Blaise A.
    Parker, Jason
    Aloni, Shaul
    Jaramillo, Thomas F.
    Wong, H-S. Philip
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010,
12345