Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

被引：0
|
作者：
Fang, ZD [1 ]
Gong, Z [1 ]
Miao, ZH [1 ]
Xu, XH [1 ]
Ni, HQ [1 ]
Niu, ZC [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2003年 / 11-2卷
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.
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页码：27 / 33
页数：7
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