Graphene and MoS2 Structures for THz Applications

被引:9
|
作者
Hijazi, A. [1 ]
El Moutaouakil, A. [1 ]
机构
[1] United Arab Emirates Univ, Al Ain, U Arab Emirates
关键词
TERAHERTZ RADIATION; TRANSISTOR;
D O I
10.1109/irmmw-thz.2019.8873712
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report on the effect of changes in the angle between the plasmon wave vector and the Graphene or MoSz nanoribbons in order to obtain the plasmon dispersion in Terahertz range for ungated and gated Graphene or MoS2 nanoribbons structures.
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页数:2
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