V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

被引：9

作者：

Huang, Fan-Hsiu ^{[1
]}

Lin, Cheng-Kuo

Chan, Yi-Jen

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan

[2] Win Semicond, Taoyuan 320, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 08期

关键词：

cross-coupled oscillator; GaAs pseudomorphic high electron mobility transistor (pHEMT); sub-harmonic injection-locked oscillator;

D O I：

10.1109/LMWC.2006.879479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mu m GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 d3m with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.

引用

页码：473 / 475

页数：3

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