New screen methodology for ultra thin gate oxide technology

被引：0

作者：

Wang, A ^{[1
]}

Wu, CH ^{[1
]}

Shiue, RY ^{[1
]}

Huang, HM ^{[1
]}

Wu, K ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 30077, Taiwan

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

burn-in; noise margin; screen method; early failure rate; DVS;

D O I：

10.1109/RELPHY.2004.1315438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Result of this study shows that Less Noise Margin (LNM) dice have reliability weakness in ultra thin gate oxide technologies. High temperature chip probing (CP) test can narrow down noise margin and screen out the weak LNM dice effectively by functional test. Moreover, this paper also indicates that circuit propagation delay and VDDmin are effective indexes to assess reliability risk.

引用

页码：659 / 660

页数：2

共 50 条

[1] Ultra-thin gate oxide technology for high performance CMOS
Momose, HS
Nakamura, S
Katsumata, Y
Iwai, H
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 235 - 246
[2] Ultra thin gate oxide characterization
Roy, D
Bruyere, S
Rideau, D
Gilibert, F
Giguerre, L
Monsieur, F
Gouget, G
Scheer, P
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 21 - 27
[3] Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
Lee, DY
Lin, HC
Chen, CL
Huang, TY
Wang, TH
Lee, TL
Chen, SC
Liang, MS
2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2003, : 77 - 80
[4] BT degradation, the new threat to ultra-thin gate oxide
Kubota, T
Makabe, M
NEC RESEARCH & DEVELOPMENT, 2001, 42 (01): : 37 - 42
[5] A new parameter predicating Gm for ultra thin nitrided gate oxide
Hori, M
Tamura, N
Kase, M
Sakuma, H
Ohota, H
Shigeno, M
Kataoka, Y
COMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY, 2003, 765 : 73 - 77
[6] A Novel Methodology for Passive Voltage Contrast Fault Isolation on Ultra Thin Gate Oxide Failure
Tong, Jinyu
Li, Kite
Gong, Excimer
Guo, Qiang
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 497 - 500
[7] New insights into breakdown modes and their evolution in ultra-thin gate oxide
Lin, HC
Lee, DY
Lee, CY
Chao, TS
Huang, TY
Wang, T
2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS, 2001, : 37 - 40
[8] Gate leakage current of NMOSFET with ultra-thin gate oxide
Shi-gang Hu
Xiao-Feng Wu
Zai-fang Xi
Journal of Central South University, 2012, 19 : 3105 - 3109
[9] Gate leakage current of NMOSFET with ultra-thin gate oxide
胡仕刚
吴笑峰
席在芳
Journal of Central South University, 2012, 19 (11) : 3105 - 3109
[10] Gate leakage current of NMOSFET with ultra-thin gate oxide
Hu Shi-gang
Wu Xiao-feng
Xi Zai-fang
JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2012, 19 (11) : 3105 - 3109

← 1 2 3 4 5 →