Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits

被引:2
|
作者
Rahimi, Somayyeh [1 ]
Schmidt, Christian [1 ]
Liao, Joy [1 ]
Marks, Howard Lee [1 ]
Shin, Kyung Mo [1 ]
机构
[1] NVIDIA Corp, 2701 San Tomas EXPY, Santa Clara, CA 95050 USA
关键词
IDDQ; Input/Output Leakage; Ring Oscillator Frequency; Surface Mount Technology; Total Ionizing Dose; V-min;
D O I
10.1109/irps45951.2020.9128356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
X-Ray imaging is widely used in the semiconductor industry, for failure analysis and for in-line inspection of surface mount devices. Here, we investigate the TID-induced degradation of logic ICs, which happens after long-term exposure to X-Ray. The observed degradation is mainly in the form of an increase in the leakage of input/output pins and the IDDQ of their circuitry. Annealing at high temperature is shown to partially recover the leakage degradation caused by the radiation.
引用
收藏
页数:4
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