Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits

被引：2

作者：

Rahimi, Somayyeh ^{[1
]}

Schmidt, Christian ^{[1
]}

Liao, Joy ^{[1
]}

Marks, Howard Lee ^{[1
]}

Shin, Kyung Mo ^{[1
]}

机构：

[1] NVIDIA Corp, 2701 San Tomas EXPY, Santa Clara, CA 95050 USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

IDDQ; Input/Output Leakage; Ring Oscillator Frequency; Surface Mount Technology; Total Ionizing Dose; V-min;

D O I：

10.1109/irps45951.2020.9128356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-Ray imaging is widely used in the semiconductor industry, for failure analysis and for in-line inspection of surface mount devices. Here, we investigate the TID-induced degradation of logic ICs, which happens after long-term exposure to X-Ray. The observed degradation is mainly in the form of an increase in the leakage of input/output pins and the IDDQ of their circuitry. Annealing at high temperature is shown to partially recover the leakage degradation caused by the radiation.

引用

页数：4

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