High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production

被引:0
|
作者
Major, C. [1 ]
Juhasz, G. [1 ]
Labadi, Z. [1 ]
Fried, M. [1 ]
机构
[1] Ctr Energy Res MTA EK MFA, Inst Tech Phys & Mat Sci, POB 49, H-1525 Budapest 114, Hungary
关键词
ellipsometry; photovoltaic cells; thin film; FILMS; SILICON; MODELS;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Non-destructive analyzing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode. Last years [M. Fried et al, Thin Solid Films 519, 2730 (2011); 571, 345 (2014)], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl= 350-1000 nm) data. Prototypes have built for 300-600-900 mm nominal width different structures (poly-Si/c-Si, ZnO/Mo, a-Si/Al, a-Si/glass) on rigid substrates. Thin layers (ZnO/a-Si:H;) on plastic foil substrates were also investigated in roll to roll operation, measurements and results of different structures are presented.
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页数:6
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