Bit Storage by 360° Domain Walls in Ferromagnetic Nanorings

被引：33
|
作者：
Muratov, Cyrill B. [1 ]
Osipov, Viatcheslav V. [2 ,3 ]
机构：
[1] New Jersey Inst Technol, Dept Math Sci, Newark, NJ 07102 USA
[2] Mission Crit Technol Inc, El Segundo, CA 90245 USA
[3] NASA, Ames Res Ctr, D&SH Branch, Intelligent Syst Div, Moffett Field, CA 94035 USA
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 08期
基金：
美国国家科学基金会;
关键词：
Current-induced switching; ferromagnetic rings; magnetoresistive random access memory (MRAM); micromagnetic modeling; topological domain walls; MAGNETIC MULTILAYER;
D O I：
10.1109/TMAG.2009.2020329
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360 domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360 domain wall splits into two charged 180 degrees walls, which then move to the opposite extreme of the ring to recombine into a 360 wall of the opposite polarity.
引用
收藏
页码：3207 / 3209
页数：3
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