Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogent-erminated CVD diamond films has been simulated. We have used diffusion profiles of shallow accepters to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (similar to 0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 x 10(13) cm(-2), and the transconductance per unit gate width of diamond MESFETs with 1 mu m gate length is predicted to be nearly 50 mS mm(-1) by using both complete and incomplete contact models. (C) 1997 Elsevier Science S.A.