Study of electron transport properties for wurtzite GaN and ZnO with full band Monte Carlo simulation

被引:3
|
作者
Guo, BZ [1 ]
Ravaioli, U
机构
[1] Univ Hebei, Coll Elect & Informat Engn, Baoding 071002, Peoples R China
[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
关键词
Monte Carlo simulation; GaN; ZnO; transport properties; band structure;
D O I
10.7498/aps.51.2344
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present the first calculated results of electron transport properties of the wurtzite GaN and ZnO with the full band Monte Carlo simulations. The band structure data being used in the simulations are based on the empirical pseudopotential method. The characteristics of drift velocity-field and average energy-field for both materials are obtained from Monte Carlo calculations, and electron mobility also are obtained. The comparison among the results of both materials, as well as the Monte Carlo results of GaAs reported by other authors have been made.
引用
收藏
页码:2344 / 2348
页数:5
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