First principles study on the electronic structures and transport properties of armchair/zigzag edge hybridized graphene nanoribbons

被引:30
|
作者
Yi, Xiuying [1 ,2 ]
Long, Mengqiu [1 ,3 ]
Liu, Anhua [2 ]
Li, Mingjun [1 ]
Xu, Hui [1 ]
机构
[1] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Peoples R China
[2] Hunan Vocat Coll Sci & Technol, Dept Mech & Elect Engn & Technol, Changsha 410004, Hunan, Peoples R China
[3] Xinjiang Univ, Sch Phys Sci & Technol, Inst Low Dimens Quantum Mat & Devices, Urumqi 830046, Peoples R China
基金
中国国家自然科学基金;
关键词
NEGATIVE DIFFERENTIAL RESISTANCE; ZIGZAG EDGES; DEPENDENCE; GRAPHYNE; SINGLE; HETEROJUNCTIONS; RECONSTRUCTION; DEFECTS; DEVICES;
D O I
10.1063/1.5020603
中图分类号
O59 [应用物理学];
学科分类号
摘要
Graphene nanoribbons (GNRs) can be mainly classified into armchair graphene nanoribbons (aGNRs) and zigzag graphene nanoribbons (zGNRs) by different edge chiral directions. In this work, by introducing Stone-Wales defects on the edges of the V-shaped aGNRs, we propose a kind of armchair/zigzag edge hybridized GNRs (a/zHGNRs) and using the density functional theory and the nonequilibrium Green's function method, the band structures and electronic transport properties of the a/zHGNRs have been calculated. Our results show that an indirect bandgap appears in the band structures of the a/zHGNRs, which is very different from the direct bandgap of aGNRs and gapless of zGNRs. We also find that the valance band is mainly derived from the armchair partial atoms on the hybridized edge, while the conduction band comes mainly from the zigzag partial atoms of the hybridized edge. Meanwhile, the bandgap also oscillates with a period of three when the ribbon width increases. In addition, our quantum transport calculations show that there is a remarkable transition between the semiconductor and the metal with different ribbon widths in the a/zHGNRs devices, and the corresponding physical analysis is given. Published by AIP Publishing.
引用
收藏
页数:8
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