A Q-band Low-profile Waveguide BRF with Built-in Cavity-Embedded Dielectric Substrates

被引:0
|
作者
Yoneda, S. [1 ]
Uchida, H. [1 ]
Tanaka, M. [1 ]
Sasaki, T. [1 ]
Yoneda, N. [1 ]
机构
[1] Mitsubishi Electr Corp, Kanagawa, Japan
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new low profile waveguide band-rejection filter (BRF) is proposed. In the waveguide BRF, Substrate Integrated Waveguide (SIW) cavities are employed as resonators, and they are simply inserted in a hollow waveguide. For this simple configuration, this waveguide BRF is low-profile and easy to fabricate compared with a conventional waveguide BRF, which employs resonant waveguide cavities outside the waveguide and needs costly machining processes to fabricate. A Q-band prototype waveguide BRF is fabricated using alumina substrates and the measured results showed high attenuation more than 50 dB at 47 GHz in 2 % fractional band-width.
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页码:473 / 476
页数:4
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