Electromigration failure mechanism studies on copper interconnects

被引：42
|
作者：
Fischer, AH [1 ]
von Glasow, A [1 ]
Penka, S [1 ]
Ungar, F [1 ]
机构：
[1] Infineon Technol AG, Reliabil Methodol, D-81739 Munich, Germany
来源：
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年
关键词：
D O I：
10.1109/IITC.2002.1014913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electromigration (EM) studies revealed a strong correlation between observed failure scenario and local microstructural properties at the via-to-line-transition, in particular that of the liner. "Early" failure modes were found to have not only smaller failure times but also a lower current density exponent. The influence of specific processes on the occurrence of certain failure modes will be discussed.
引用
收藏
页码：139 / 141
页数：3
相关论文
共 50 条
  • [1] Electromigration failure modes in damascene copper interconnects
    Arnaud, L
    Gonella, R
    Tartavel, G
    Torres, J
    Gounelle, C
    Gobil, Y
    Morand, Y
    [J]. MICROELECTRONICS RELIABILITY, 1998, 38 (6-8) : 1029 - 1034
  • [2] Resistometric study on electromigration failure in copper interconnects
    Wu Zhen-Yu
    Dong Si-Wan
    Liu Yi
    Chai Chang-Chun
    Yang Yin-Tang
    [J]. ACTA PHYSICA SINICA, 2012, 61 (24)
  • [3] Mechanism of electromigration failure in submicron Cu interconnects
    Nancy L. Michael
    Choong-Un Kim
    Qing-Tang Jiang
    R. A. Augur
    P. Gillespie
    [J]. Journal of Electronic Materials, 2002, 31 : 1004 - 1008
  • [4] Mechanism of electromigration failure in submicron Cu interconnects
    Michael, NL
    Kim, CU
    Jiang, QT
    Augur, RA
    Gillespie, P
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (10) : 1004 - 1008
  • [5] Electromigration failure in ultra-fine copper interconnects
    Nancy L. Michael
    Choong-Un Kim
    Paul Gillespie
    Rod Augur
    [J]. Journal of Electronic Materials, 2003, 32 : 988 - 993
  • [6] Electromigration failure in ultra-fine copper interconnects
    Michael, NL
    Kim, CU
    Gillespie, P
    Augur, R
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (10) : 988 - 993
  • [7] Electromigration in copper damascene interconnects: reservoir effects and failure analysis
    Shao, W
    Vairagar, A
    Tung, CH
    Xie, ZL
    Krishnamoorthy, A
    Mhaisalkar, SG
    [J]. SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3): : 257 - 261
  • [8] Analysis of electromigration extrusion failure mode in damascene copper interconnects
    Arnaud, Lucile
    Tartavel, Gérard
    Berger, Thierry
    Mondon, François
    Truche, Robert
    [J]. Materials Research Society Symposium Proceedings, 2001, 714 : 76 - 81
  • [9] Modeling the electromigration failure time distribution in short copper interconnects
    Dwyer, V. M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)
  • [10] Modeling the electromigration failure time distribution in short copper interconnects
    Dwyer, V.M.
    [J]. Journal of Applied Physics, 2008, 104 (05):
12345