Microscopic carrier dynamics in quantum wells modulated by high-frequency lateral fields

被引：2
|
作者：
Santos, PV
Alsina, F
Zhang, SK
Hey, R
García-Cristóbal, A
Cantarero, A
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
quantum wells; high-frequency fields; surface acoustic waves;
D O I：
10.1016/S1386-9477(02)00167-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the dynamics of photogenerated carriers in GaAs quantum wells under the influence of high-frequency fields produced by metal gratings and by surface acoustic waves (SAW's) using spatially and time-resolved photo luminescence (PL). The frequency and phase of the PL oscillations induced by the high-frequency field yield information about the spatial distribution of the carriers and, in the case of SAW's, about the band-gap modulation induced by the SAW strain. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：467 / 472
页数：6
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