Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride

被引：3

作者：

Huang, Chen-Yang ^{[1
,2
]}

Ku, Hao-Min ^{[1
]}

Liao, Wei-Tsai ^{[2
]}

Chao, Chu-Li ^{[2
]}

Tsay, Jenq-Dar ^{[2
]}

Chao, Shiuh ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 07期

关键词：

LIGHT-EMITTING-DIODES; LASER-DIODES;

D O I：

10.1364/OE.17.005624

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ta2O5/SiO2 dielectric multi-layer micro-mirror array (MMA) with 3 mu m mirror size and 6 mu m array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200 degrees C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200 degrees C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2.56 mu m GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light. (C) 2009 Optical Society of America

引用

页码：5624 / 5629

页数：6