Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics

被引：0
|
作者：
Assali, Simone [1 ]
Attiaoui, Anis [1 ]
Bouthillier, Etienne [1 ]
Del Vecchio, Patrick [1 ]
Kumar, Aashish [1 ]
Mukherjee, Samik [1 ]
Nicolas, Jerome [1 ]
Moutanabbir, Oussama [1 ]
机构：
[1] Ecole Polytech Montreal, Dept Engn Phys, Montreal, PQ, Canada
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GeSn alloys have recently been the subject of extensive investigations as a new platform to engineer the band structure and directness in group IV semiconductors thus providing a rich playground to implement silicon-compatible photonics and optoelectronics. Herein, we discuss the growth of these metastable semiconductors and their use in a variety of silicon-compatible devices. We will also discuss the effects of strain and Sn content on the optical, electronic, and structural properties of Sn-rich group IV semiconductors. Comments and questions should be directed to the OSA Conference Papers staff (tel: +1 202.416.6191, e-mail: cstech@osa.org). (c) 2019 The Author(s)
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