Preparation and characterization of ZnCdS and CdTe thin films by PVD for photovoltaic applications

被引：8
|
作者：
Ashraf, Muhammad [1 ]
Hussain, Syed Sajjad [1 ]
Riaz, Saira [1 ]
Naseem, Shahzad [1 ]
机构：
[1] Univ Punjab, Ctr Excellence Solid State Phys, Lahore, Pakistan
来源：
MATERIALS TODAY-PROCEEDINGS | 2015年 / 2卷 / 10期
关键词：
Thin Films; PVD; ZnCdS; CdTe; Photovoltaic Applications;
D O I：
10.1016/j.matpr.2015.11.112
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnCdS and CdTe thin films were deposited with physical vapor deposition using Edward's coating unit at room temperature conditions for photovoltaic applications. ZnCdS and CdTe were deposited with thicknesses of 0.34 mu m and 2.77 mu m respectively. Optical and electrical characterizations of these samples were performed. Optical band gap for ZnCdS was found to be 2.48 eV and for CdTe 1.68 eV. Resistance of ZnCdS was measured to be 22.73M Omega while for CdTe it was 274.5M Omega. Similarly electrical resistivity value for CdTe sample was 760 x 10(2) Omega.cm. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：5695 / 5699
页数：5
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