Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates

被引:37
|
作者
Katiyar, Ajit K. [1 ]
Sinha, Arun Kumar [1 ]
Manna, Santanu [1 ]
Ray, Samit K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
关键词
metal-assisted chemical etching; Si nanowires; Si/ZnS heterojunction; nanowire heterojunction; electroluminescence; white light emission; ZNS; PHOTOLUMINESCENCE;
D O I
10.1021/am5028605
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.
引用
收藏
页码:15007 / 15014
页数:8
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