Blistering kinetics of GaN by hydrogen implantation at high temperature

被引：13

作者：

Woo, H. J. ^{[1
]}

Choi, H. W. ^{[1
]}

Hong, W. ^{[1
]}

Park, J. H. ^{[1
]}

Eum, C. H. ^{[1
]}

机构：

[1] Korea Inst Geosci & Mineral Resources, Ion Beam Applicat Grp, Taejon 305350, South Korea

来源：

SURFACE & COATINGS TECHNOLOGY | 2009年 / 203卷 / 17-18期

关键词：

GaN epi-wafer; Hydrogen implantation; Blistering kinetics; ION-CUT;

D O I：

10.1016/j.surfcoat.2009.02.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The hydrogen ion implantation condition for the ion-cut process in wurtzite-phase GaN and the associated mechanisms of surface blistering of GaN films were investigated. The hydrogen ions were implanted at 40 keV with fluences in the range of (1.5-5) x 10(17) H(+)/cm(2) over a wide temperature range (RT-450 C), and at 60 keV at room temperature with fluences in the range of (3-5) X 10(17) H(+)/cm(2). The influences of the ion fluence, implant temperature and the post-implantation annealing conditions on blistering process were studied. Optical microscopy, field emission scanning electron microscopy (FE-SEM), high resolution X-ray diffraction (HRXRD), Rutherford backscattering spectrometry/channeling (RBS/C), and cross-sectional transmission electron microscopy (XTEM) were used to investigate splitting kinetics, and the optimum conditions for achieving blistering only after post-implantation annealing were determined for the GaN ion-cut process. The optimum fluence for the GaN blistering by hydrogen implantation and subsequent low temperature annealing (250-350 degrees C) was in the (2-3) X 10(17) H(+)/cm(2) range within the implantation temperature window of 150-300 degrees C with activation energies in the range of 1.0-1.6 eV depending on the implanted ion fluence and implant temperature. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：2375 / 2379

页数：5