Direct-Write Ion Beam Irradiated Josephson Junctions

被引：0
|
作者：
Cho, Ethan Y. [1 ]
Li, Hao [1 ]
Cybart, Shane A. [1 ]
机构：
[1] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
来源：
2019 IEEE INTERNATIONAL SUPERCONDUCTIVE ELECTRONICS CONFERENCE (ISEC) | 2019年
基金：
美国国家卫生研究院; 美国国家科学基金会;
关键词：
Focused ion beam; Helium ion microscope; Josephson junction; Array;
D O I：
10.1109/isec46533.2019.8990934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We highlight the reproducibility and level of control over the electrical properties of YBa2Cu3O7-delta Josephson junctions fabricated with irradiation from a focused helium ion beam. Specifically we show the results of electrical transport properties for several junctions fabricated using a large range of irradiation doses. At the lower end of this range, junctions exhibit superconductor-normal metal-superconductor (SNS) Josephson junction properties. However, as dose increases there is a transition to electrical characteristics consistent with superconductor-insulator-superconductor (SIS) junctions. To investigate the uniformity of large numbers of helium ion Josephson junctions we fabricate arrays of both SNS and SIS Josephson junctions containing 20 connected in series. Electrical transport properties for these arrays reveal very uniform junctions with no appreciable spread in critical current or resistance.
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