Intra-domain periodic defects in monolayer MoS2

被引：15

作者：

Roy, Anupam ^{[1
]}

Ghosh, Rudresh ^{[1
]}

Rai, Amritesh ^{[1
]}

Sanne, Atresh ^{[1
]}

Kim, Kyounghwan ^{[1
]}

Movva, Hema C. P. ^{[1
]}

Dey, Rik ^{[1
]}

Pramanik, Tanmoy ^{[1
]}

Chowdhury, Sayema ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 20期

关键词：

DISLOCATION-DRIVEN GROWTH; VAPOR-PHASE GROWTH; ATOMIC LAYERS; GRAIN-BOUNDARIES; FEW-LAYER; STRAIN; CVD; TRANSPORT; CIRCUITS;

D O I：

10.1063/1.4983789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films. Published by AIP Publishing.

引用

页数：5

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