ESD characteristics of GaAs versus Silicon diode

被引：0
|
作者：
Park, Changkun [1 ]
Yun, Seok-Oh [1 ]
Han, Jeonghu [1 ]
Cheon, Sang-Hoon [1 ]
Park, Jae-Woo [1 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South Korea
来源：
GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ESD characteristics of GaAs diode are compared with those of Silicon diode. The ESD diodes are designed and implemented using GaAs HBT technology and 0.25 um CMOS technology. The differences of ESD characteristics between GaAs diode and Silicon diode are investigated, simulated and measured. Because the thermal characteristics of GaAs are different from those of Silicon, the ESD characteristics of GaAs device are different from those of Silicon device.
引用
收藏
页码：273 / 276
页数：4
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