Stress-induced transition from vacancy annihilation to void nucleation near microcracks

被引:12
|
作者
Zarnas, Patrick D. [1 ]
Boyce, Brad L. [2 ]
Qu, Jianmin [3 ]
Dingreville, Remi [2 ]
机构
[1] Northwestern Univ, Evanston, IL 60208 USA
[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA
[3] Tufts Univ, Medford, MA 02155 USA
关键词
Crack tip; Stress intensity factor; Voids; Point defects; Vacancy condensation;
D O I
10.1016/j.ijsolstr.2020.12.014
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
The accumulation of point defects and defect clusters in materials, as seen in irradiated metals for example, can lead to the formation and growth of voids. Void nucleation is derived from the condensation of supersaturated vacancies and depends strongly on the stress state. It is usually assumed that such stress states can be produced by microstructural defects such dislocations, grain boundaries or triple junctions, however, much less attention has been brought to the formation of voids near microcracks. Here, we investigate the coupling between point-defect diffusion/recombination and concentrated stress fields near mode-I crack tips via a spatially-resolved rate theory approach. A modified chemical potential enables point-defect diffusion to be partially driven by the mechanical fields in the vicinity of the crack tip. Simulations are carried out for microcracks using the Griffith model with increasing stress intensity factor K-I. Our results show that below a threshold for the stress intensity factor, the microcrack acts purely as a microstructural sink, absorbing point defects. Above this threshold, vacancies accumulate at the crack tip. These results suggest that, even in the absence of plastic deformation, voids can form in the vicinity of a microcrack for a given load when the crack's characteristic length is above a critical length. While in ductile metals, irradiation damage generally causes hardening and corresponding quasi-brittle cleavage, our results show that irradiation conditions can favor void formation near microstructural stressors such as crack tips leading to lower resistance to crack propagation as predicted by traditional failure analysis. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页码:103 / 110
页数:8
相关论文
共 50 条
  • [1] DEVELOPMENT OF STRESS-INDUCED MICROCRACKS IN WESTERLY GRANITE
    TAPPONNIER, P
    BRACE, WF
    INTERNATIONAL JOURNAL OF ROCK MECHANICS AND MINING SCIENCES, 1976, 13 (04): : 103 - 112
  • [2] A new method for studying stress-induced microcracks in concrete
    Nemati, KM
    Monteiro, PJM
    Cook, NGW
    JOURNAL OF MATERIALS IN CIVIL ENGINEERING, 1998, 10 (03) : 128 - 134
  • [3] MODELING OF STRESS-INDUCED DIAMOND NUCLEATION
    DEAK, P
    GALI, A
    SCZIGEL, G
    EHRHARDT, H
    DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 706 - 709
  • [4] STRESS-INDUCED VOID FORMATION IN METAL LINES
    FLINN, PA
    MACK, AS
    BESSER, PR
    MARIEB, TN
    MRS BULLETIN, 1993, 18 (12) : 26 - 35
  • [5] Electrical measurement of stress-induced void growth
    Sullivan, TD
    Bouldin, DP
    Yao, DH
    STRESS-INDUCED PHENOMENA IN METALLIZATION - THIRD INTERNATIONAL WORKSHOP, 1996, (373): : 67 - 80
  • [6] Stress-induced nucleation of microcrystalline silicon from amorphous phase
    Fujiwara, H
    Kondo, M
    Matsuda, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2821 - 2828
  • [7] Dislocation nucleation from near surface void under static tensile stress in Cu
    Pohjonen, A. S.
    Djurabekova, F.
    Nordlund, K.
    Kuronen, A.
    Fitzgerald, S. P.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [8] Stress-induced void formation in passivated Cu films
    Gan, DW
    Li, B
    Ho, PS
    Thin Films Stresses and Mechanical Properties XI, 2005, 875 : 319 - 324
  • [9] Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low-κ Interconnects
    Yokogawa, Shinji
    Tsuchiya, Hideaki
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (01) : 272 - 276
  • [10] Stress-induced void formation in passivated Cu films
    Gan, DW
    Li, B
    Ho, PS
    Materials, Technology and Reliability of Advanced Interconnects-2005, 2005, 863 : 259 - 264