GaN-based Modular Multilevel Converter

被引：0
|
作者：
Stras, Andrzej [1 ]
Jackiewicz, Krzysztof [1 ]
Miazga, Tomasz [1 ]
Balkowiec, Tomasz [1 ]
Gierczynski, Michal [1 ]
Kaszewski, Arkadiusz [1 ]
机构：
[1] Warsaw Univ Sci & Technol, Inst Sterowania & Elekt Przemystowej, Ul Koszykowa 75, PL-00662 Warsaw, Poland
来源：
PRZEGLAD ELEKTROTECHNICZNY | 2019年 / 95卷 / 10期
关键词：
modular multilevel converter; GaN transistors; voltage source inverter; power electronics;
D O I：
10.15199/48.2019.10.39
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The article describes issues related to the Modular Multilevel Converter made with the use of gallium nitride (GaN) HEMT transistors. The design of the power circuit of the device and the requirements for the control system are presented. The publication also presents the description of the electronic control platform designed to control the converter.
引用
收藏
页码：169 / 172
页数：4
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