ZnO nanorod arrays on n-type Si(111) substrates for pH measurements

被引:5
|
作者
Ogata, Ken-ichi [1 ]
Koike, Kazuto [1 ]
Sasa, Shigehiko [1 ]
Inoue, Masataka [1 ]
Yano, Mitsuaki [1 ]
机构
[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan
来源
关键词
electrochemistry; electrolytes; II-VI semiconductors; nanostructured materials; nanotechnology; semiconductor growth; wide band gap semiconductors; zinc compounds; X-RAY; GROWTH; NANOWIRES; NANOSTRUCTURES; DEPOSITION; SILICON; OXIDE;
D O I
10.1116/1.3098503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
ZnO nanorod arrays were grown directly on n-Si (111) substrates using an aqueous solution method aiming at integration with Si-based device technology. The growth of the ZnO nanorod arrays was found to be influenced by the thickness of the native oxide layer on Si substrates. A dense array of about 200 nm diameter nanorods was obtained from the thick equimolar aqueous solution containing 100 mM of zinc nitrate hexahydrate and hexamethylenetetramine, while the solution with lower concentrations resulted in scattered corn-shaped ones. Electrochemical potential in electrolyte of the ZnO nanorod arrays on Si (111) substrates was studied and found to have a slope of -50 mV/pH, suggesting a potential application to future sensing nanosystems.
引用
收藏
页码:1684 / 1687
页数:4
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