Effects of potassium application on soil ecological resistance to Verticillium wilt of cotton (Gossypium hirsutum L.)

被引:5
|
作者
Ju, Feiyan [1 ]
Li, Yan [1 ]
Zhang, Xihe [1 ]
Yu, Kai [1 ]
Huo, Yuyang [1 ]
Zhu, Junjun [1 ]
Wang, Youhua [1 ]
Zhou, Zhiguo [1 ]
Ali, Saif [1 ]
Tang, Qiuxiang [2 ]
Chen, Binglin [1 ]
机构
[1] Nanjing Agr Univ, Coll Agr, Nanjing 210095, Jiangsu, Peoples R China
[2] Xinjiang Agr Univ, Coll Agron, Urumqi, Peoples R China
基金
中国国家自然科学基金;
关键词
Cotton (Gossypium hirsutum L; Verticillium wilt; potassium; root exudates; soil microorganism; AVAILABLE CARBON; ROOT EXUDATE; DAHLIAE; RHIZOSPHERE; PLANTS; MAIZE; TRANSFORMATIONS; MICROSCLEROTIA; COMMUNITIES; CULTIVARS;
D O I
10.1080/03650340.2020.1841173
中图分类号
S3 [农学(农艺学)];
学科分类号
0901 ;
摘要
Verticillium wilt (V-wilt) causes huge and irreparable losses to cotton worldwide every year. Potassium (K) is considered to be a critical nutrient for resistance to biotic and abiotic stresses. To verify the effect of K application on the establishment of an ecological-friendly soil microenvironment resistant to V-wilt, a two-year field experiment was conducted. Two cotton varieties (ND-601, resistive and JM-11, sensitive) with different resistance to V-wilt were used in this study, and five different K rates (0, 75, 150, 225, and 300 kg ha(-1) K2O) were set for each variety in the field inoculated with Verticillium dahliae (V. dahliae). The results showed that different levels of K application had significant effect on the reduction of cotton V-wilt. K application increased the content of K and total phenolics in rhizosphere soil, but decreased the content of soluble sugar and alanine. Moreover, K application reduced the number of bacteria, fungi, and total microorganisms in rhizosphere soil, especially the number of V. dahliae. In conclusion, K application can create a good micro-ecological environment for the root system by changing the K status, root exudates, and microorganisms in rhizosphere soil, which are beneficial to reduce the symptoms of cotton V-wilt.
引用
收藏
页码:488 / 502
页数:15
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