Low-frequency noise and defects in copper and ruthenium resistors

被引：12

作者：

Fleetwood, D. M. ^{[1
]}

Beyne, S. ^{[2
,3
]}

Jiang, R. ^{[1
]}

Zhao, S. E. ^{[1
]}

Wang, P. ^{[1
]}

Bonaldo, S. ^{[4
]}

McCurdy, M. W. ^{[1
]}

Tokei, Zs. ^{[3
]}

DeWolf, I. ^{[2
,3
]}

Croes, Kristof ^{[3
]}

Zhang, E. X. ^{[1
]}

Alles, M. L. ^{[1
]}

Schrimpf, R. D. ^{[1
]}

Reed, R. A. ^{[1
]}

Linten, D. ^{[3
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Katholieke Univ Leuven, MTM, Kasteelpk Arenberg 44 Bus 2450, B-3001 Leuven, Belgium

[3] Imec, Kapeldreef 75, B-3001 Leuven, Belgium

[4] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 20期

关键词：

1/F NOISE; 1-F NOISE; TEMPERATURE-DEPENDENCE; LOCAL-INTERFERENCE; RELIABILITY; FILMS; ELECTROMIGRATION; INTERCONNECTS; FLUCTUATIONS; TECHNOLOGY;

D O I：

10.1063/1.5093549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.8-MeV proton irradiation to a fluence of 10(14)/cm(2) does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form metal lines. The room-temperature noise of these Cu and Ru resistors is surprisingly similar to that of Cu and Pt metal lines and wires fabricated using late-1970s nanofabrication techniques; however, measurements of the temperature dependence of the noise show that the defect kinetics are quite different among the various materials. A large increase in the noise magnitude observed above 200K in Cu but not in Ru is consistent with the superior resistance to electromigration that Ru lines have shown, relative to Cu.

引用

页数：5

共 50 条

[1] LOW-FREQUENCY NOISE IN P+-GAAS RESISTORS
JARRIX, S
DELSENY, C
PASCAL, F
LECOY, G
DANGLA, J
[J]. ELECTRONICS LETTERS, 1993, 29 (17) : 1571 - 1573
[2] MEASUREMENTS OF LOW-FREQUENCY NOISE IN THICK FILM RESISTORS
HAWKINS, RJ
BLOODWORTH, GG
[J]. THIN SOLID FILMS, 1971, 8 (03) : 193 - +
[3] Low-frequency noise of integrated poly-silicon resistors
Brederlow, R
Weber, W
Dahl, C
Schmitt-Landsiedel, D
Thewes, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1180 - 1187
[4] Low-Frequency Noise in Integrated N-WELL Resistors
Srinivasan, P.
Xiong, W.
Zhao, S.
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) : 1476 - 1478
[5] Low-frequency noise characterization of very large value resistors
Arnaboldi, C
Bucci, C
Cremonesi, O
Fascilla, A
Nucciotti, A
Pavan, M
Pessina, G
Pirro, S
Previtali, E
Sisti, M
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (04) : 1808 - 1813
[6] Modeling of low-frequency noise in barium titanate ceramic resistors
Wong, H
Han, PG
Poon, MC
[J]. 1998 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1998, : 49 - 53
[7] TEMPERATURE-DEPENDENCE OF LOW-FREQUENCY ELECTRICAL NOISE IN SILICON RESISTORS
JONES, BK
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (03) : 471 - 490
[8] New model for low-frequency noise in poly-Si resistors
Lee, J
Han, I
Chang, SK
Kim, E
Lee, MB
[J]. ON THE CONVERGENCE OF BIO-INFORMATION-, ENVIRONMENTAL-, ENERGY-, SPACE- AND NANO-TECHNOLOGIES, PTS 1 AND 2, 2005, 277-279 : 1054 - 1059
[9] Doping dependence of low-frequency noise in polycrystalline SiGe film resistors
Chen, XY
Salm, C
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 516 - 518
[10] EFFECT OF CRYSTAL DEFECTS ON TRANSISTOR NOISE AT LOW-FREQUENCY
KOJI, T
[J]. NEC RESEARCH & DEVELOPMENT, 1975, (39): : 65 - 70

← 1 2 3 4 5 →