Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

被引:26
|
作者
Zhu, Jun [1 ]
Zhang, Haosu [1 ]
Zhu, Zhendong [1 ,2 ,3 ]
Li, Qunqing [2 ,3 ]
Jin, Guofan [1 ]
机构
[1] Tsinghua Univ, State Key Lab Precis Measurement Technol & Instru, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
关键词
GaN light-emitting diodes; Photoluminescence; Diffraction gratings; Surface plasmons; Emission efficiency; Enhancement of internal quantum; efficiency; LIGHT-EMISSION; QUANTUM-WELLS; PHOTOLUMINESCENCE;
D O I
10.1016/j.optcom.2014.02.011
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano grating. This structure contains a SiO2 film, a Ag film and a HfO2 film sequentially coated On the rectangularly-pattemed p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO2 cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO2 layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity or top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer. (C) 2014 Elsevier By. All rights reserved
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页码:66 / 72
页数:7
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