Recessed gate GaN field effect transistor

被引：0

作者：

Karlicek, RF

Tran, L

Schurmann, M

Lee, JW

Pearton, SJ

机构：

[1] EMCORE CORP, SOMERSET, NJ 08873 USA

[2] UNIV FLORIDA, GAINESVILLE, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A n(+)/n GaN metal semiconductor field effect transistor was fabricated, with the gate recess formed by Electron Cyclotron Resonance BCl3N2 dry etching. The drain source breakdown voltage is >20 V, and annealing at 400 degrees C was found to be necessary after the dry etch step to produce a high gate breakdown voltage (similar to 25 V). (C) 1997 Elsevier Science Ltd.

引用

页码：1819 / 1820

页数：2

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