IGBT driver chipset for high power applications

被引：0
|
作者：
Herzer, R [1 ]
Pawel, S [1 ]
Lehmann, J [1 ]
机构：
[1] Semikron Elekt GMBH, D-90431 Nurnberg, Germany
来源：
PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An integrated chipset is presented for application in IGBT high power systems. It has flexible controller ICs on the primary side and strong driver ICs on the secondary side. The whole system is arranged so that pulse transformers provide physical potential separation and the voltage is scalable between 600V and 1700V at currents from 20A up to 3000A. The option to use opto-couplers and fiber optics instead of pulse transformers extends the chipset's applicability.
引用
收藏
页码：161 / 164
页数：4
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