Polymer-Based Resistive Memory Materials and Devices

被引:453
|
作者
Lin, Wen-Peng [1 ,2 ]
Liu, Shu-Juan [1 ,2 ]
Gong, Tao [1 ,2 ]
Zhao, Qiang [1 ,2 ]
Huang, Wei [1 ,2 ,3 ]
机构
[1] Nanjing Univ Posts & Telecommun, Key Lab Organ Elect & Informat Displays, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Nanjing 210023, Jiangsu, Peoples R China
[3] Nanjing Univ Technol, Inst Adv Mat, Nanjing 210003, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
REDUCED GRAPHENE OXIDE; ELECTRICAL SWITCHING BEHAVIOR; DONOR-ACCEPTOR POLYMERS; PI-STACKED POLYMERS; NONVOLATILE MEMORY; CONJUGATED-POLYMER; HIGH-PERFORMANCE; THIN-FILM; PENDANT CARBAZOLE; FUNCTIONAL POLYIMIDES;
D O I
10.1002/adma.201302637
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.
引用
收藏
页码:570 / 606
页数:37
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