FREE CARRIER LIFETIME MODIFICATION FOR SILICON WAVEGUIDE BASED DEVICES

被引：0

作者：

Wright, N. M. ^{[1
]}

Thomson, D. J. ^{[1
]}

Litvinenko, K. L. ^{[1
]}

Headley, W. R. ^{[1
]}

Smith, A. J. ^{[1
]}

Knights, A. P. ^{[2
]}

Gardes, F. Y. ^{[1
]}

Mashanovich, G. Z. ^{[1
]}

Gwilliam, R. ^{[1
]}

Reed, G. T. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 5XH, Surrey, England

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年

关键词：

D O I：

10.1109/GROUP4.2008.4638118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effects of implanting silicon directly into a silicon waveguide to modify carrier lifetime. Experimental results show over 85% reduction in the carrier lifetime for only a small net increase in optical absorption.

引用

页码：122 / 124

页数：3

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