Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

被引：19
|
作者：
Hong, RJ [1 ]
Shao, JD
He, HB
Fan, ZX
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Res & Dev Ctr Opt Thin Film Coatings, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期
关键词：
D O I：
10.1063/1.2198934
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature
    Hong, Ruijin
    Shao, Jianda
    He, Hongbo
    Fan, Zhengxiu
    Journal of Applied Physics, 2006, 99 (09):
  • [2] Enhancement of near-band-edge photoluminescence from ZnO films by face-to-face annealing
    Wang, YG
    Lau, SP
    Zhang, XH
    Hng, HH
    Lee, HW
    Yu, SF
    Tay, BK
    JOURNAL OF CRYSTAL GROWTH, 2003, 259 (04) : 335 - 342
  • [3] Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition
    Mohanty, Bhaskar Chandra
    Yeon, Deuk Ho
    Das, Sachindra Nath
    Kwak, Ji Hye
    Yoon, Kyung Hoon
    Cho, Yong Soo
    MATERIALS CHEMISTRY AND PHYSICS, 2013, 140 (2-3) : 610 - 615
  • [4] Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures
    Kim, Sung
    Kim, Chang Oh
    Oh, Hyoung Taek
    Choi, Suk-Ho
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (23)
  • [5] Extraordinary near-band-edge photoluminescence in the highly epitaxial ZnO films deposited by PLD
    Ashfaq, J. M.
    Hu, B. C.
    Zhou, N.
    Shaibo, J.
    Ma, C. Y.
    Zhang, Q. Y.
    JOURNAL OF LUMINESCENCE, 2016, 178 : 192 - 195
  • [6] Similar Effects of the Electric Field and Annealing on the Near-band-edge Photoluminescence in ZnO Films
    Yalishev, Vadim Sh.
    Yuldashev, Shavkat U.
    Yunusov, Ziyodbek A.
    Kang, Tae Won
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 68 (03) : 448 - 451
  • [7] Similar effects of the electric field and annealing on the near-band-edge photoluminescence in ZnO films
    Vadim Sh. Yalishev
    Shavkat U. Yuldashev
    Ziyodbek A. Yunusov
    Tae Won Kang
    Journal of the Korean Physical Society, 2016, 68 : 448 - 451
  • [8] Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature
    Su, Fu Hai
    Wang, Wen Jie
    Ding, Kun
    Li, Guo Hua
    Liu, Yuangfang
    Joly, Alan G.
    Chen, Wei
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 67 (11) : 2376 - 2381
  • [9] Strong Enhancement of Near-Band-Edge Photoluminescence of ZnO Nanowires Decorated with Sputtered Metallic Nanoparticles
    Mohsen Purahmad
    Michael A. Stroscio
    Mitra Dutta
    Journal of Electronic Materials, 2014, 43 : 740 - 745
  • [10] Strong Enhancement of Near-Band-Edge Photoluminescence of ZnO Nanowires Decorated with Sputtered Metallic Nanoparticles
    Purahmad, Mohsen
    Stroscio, Michael A.
    Dutta, Mitra
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (03) : 740 - 745
12345