Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon

被引：58
|
作者：
Couderc, Romain [1 ,2 ]
Amara, Mohamed [2 ]
Lemiti, Mustapha [1 ]
机构：
[1] Univ Lyon, CNRS, Inst Nanotechnol INL UMR5270, INSA Lyon, F-69621 Villeurbanne, France
[2] Univ Lyon, CNRS, Ctr Therm Lyon CETHIL UMR5008, INSA Lyon, F-69621 Villeurbanne, France
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 09期
关键词：
UNIAXIALLY STRESSED SILICON; CYCLOTRON-RESONANCE; BAND-GAP; ENERGY-GAP; SEMICONDUCTORS; ELECTRONS; GERMANIUM; HOLES; MASS; SI;
D O I：
10.1063/1.4867776
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The intrinsic carrier density n(i) of crystalline silicon is an essential parameter for the simulation of electrical and thermal behavior of silicon devices. At 300 K, a value of ni = 9.65 x 10(9) cm(-3) has been determined by extensive experimental studies. However, the temperature dependence of this parameter remains to be verified. In this work, we propose a new expression n(i) 1: 541 x 10(15)T(1.712)exp(-E-g(0)/(2kT) thanks to an updated fit of experimental data. Polynomial fits of (m(dc)(*)/m(0))(3/2) and (m(dv)(*)/m(0))(3/2) are also proposed to model N-C and N-V. (C) 2014 AIP Publishing LLC.
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页数：5
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