Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis

被引：0
|
作者：
Sun, Lei [1 ]
Zhou, Wenzheng [1 ,2 ,4 ]
Yu, Guolin [1 ]
Shang, Liyan [1 ]
Gao, Kuanghong [1 ]
Zhou, Yuanming [1 ]
Lin, Tie [1 ]
Cui, Lijie [3 ]
Zeng, Yiping [3 ]
Chu, Junhao [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[4] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 06期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
QUANTUM-WELLS; GRADED HETEROSTRUCTURES; LOCALIZATION; SCATTERING; SYSTEMS; TIME; HETEROJUNCTIONS;
D O I：
10.1143/JJAP.48.063004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak anti localization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08 meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions. (C) 2009 The Japan Society of Applied Physics
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页数：5
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