Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interfaces

被引：35
|
作者：
Takamura, Yota [1 ]
Suzuki, Takahiro [1 ]
Fujino, Yorinobu [1 ]
Nakagawa, Shigeki [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
关键词：
TUNNEL-JUNCTION;
D O I：
10.1063/1.4865971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 100-nm-thick L2(1)-ordered full-Heusler Co2FeSi (CFS) alloy film was fabricated using the facing targets sputtering (FTS) method at a substrate temperature T-S of 300 degrees C. The degrees of L2(1) - and B2-order for the film were 37% and 96%, respectively. In addition, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by the magnetic anisotropy of MgO-interfaces were also successfully fabricated using the FTS method. The CFS/MgO stacked layers exhibited PMA when the CFS layer had a thickness of 0.6 nm <= d(CFS) <= 1.0 nm. The PMA in these structures resulted from the CFS/MgO interfacial perpendicular magnetic anisotropy. (C) 2014 AIP Publishing LLC.
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页数：3
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