Influence of ion implantation on oxidation behavior of TiAl

被引：1
|
作者：
Yoshihara, Michiko
Taniguchi, Shigeji
机构：
[1] Yokohama Natl Univ, Dept Mech Engn & Mat Sci, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
[2] Osaka Univ, Dept Mat Sci & Proc, Suita, Osaka 5650871, Japan
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2006年 / 20卷 / 25-27期
关键词：
TiAl; oxidation; ion-implantation; high-temperature;
D O I：
10.1142/S0217979206041860
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of alloying elements on oxidation behavior of TiAl has been investigated using an ion-implantation technique and the mechanisms were discussed. The influence can be classified into several groups according to their effects. The implantation of beta-forming elements, halogens, Cu and Zn results in a significant improvement of the oxidation behavior through formation of Al2O3 layer in the initial stage of oxidation. The improvement by Zn is attributed to the formation of complex oxide of Zn and selective oxidation of Al beneath the layer. The implantation of Al, Si or P is also effective. On the other hand, implantation of Ag, Se and other several elements enhance the oxidation. The deterioration by Ag or Se is explained in terms of Al depletion in the implanted layer.
引用
收藏
页码：4667 / 4672
页数：6
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