X-ray diffraction and reflectivity studies of thin porous silicon layers

被引:19
|
作者
Buttard, D
Dolino, G
Bellet, D
Baumbach, T
机构
关键词
D O I
10.1557/PROC-452-437
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High resolution X-ray diffraction and reflectivity have been used for the structural characterization of thin porous silicon layers of p and p(+) doping type. Thin porous silicon layers studied either by diffraction or reflectivity, in the range of 10-1000 nm, exhibit several thickness fringes, corresponding to a lateral homogeneity of the layer thickness. The comparison between the experimental results with simulations enables one to deduce structural information relative to the porosity, thickness, lattice parameter as well as interface thickness. For p(+) type samples a double fringe system was observed, showing the existence of a surface film probably at the porous silicon layer top surface.
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页码:437 / 442
页数:6
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