The superconducting microwave devices based on S-N transition in HTS films

被引：1
|
作者：
Vendik, I
Kozyrev, AB
Gaidukov, M
Sherman, V
Svishchev, V
Razumov, S
Dovgan, D
Bolioli, S
Dirassen, B
Zaitzer, A
Wordenweber, R
机构：
来源：
27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II | 1997年
关键词：
D O I：
10.1109/EUMA.1997.337911
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The transition from the superconducting state to the normal one (S-N transition) under de or microwave transport current is used as a base of current controlled microwave devices. The high-temperature superconducting (HTS) integrated circuits of a microwave switch and a digital phase shifter are designed and experimentally investigated. The microwave power limiter is designed as a non-linear low-pass filter. The circuit of the power limiter is experimentally investigated. High quality YBCO films on sapphire substrate have been grown and used for the devices mentioned. A high performance of these new devices is exhibited.
引用
收藏
页码：909 / 914
页数：6
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