Bootstrapped Ring Oscillator with Propagation Delay Time below 1.0 nsec/stage by Standard 0.5μm Bottom-Gate Amorphous Ga2O3-In2O3-ZnO TFT Technology

被引：0

作者：

Yin, Huaxiang ^{[1
]}

Kim, Sunil ^{[1
]}

Kim, Chang Jung ^{[1
]}

Park, Jae Chul ^{[1
]}

Song, Ihun ^{[1
]}

Kim, Sang-Wook ^{[1
]}

Lee, Sung-Hoon ^{[1
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Lab, Yongin 449712, Kyunggi Do, South Korea

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design and fabrication of the high performance ring oscillator with the standard 0.5 mu m bottom-gate amorphous Ga(2)O(3)-In(2)O(3)-ZnO TFT technology. A series of process and geometry parameters of devices are sophistically optimized to decrease the circuit signal's propagation delay and, in particular, a novel 3TFTs bootstrapped inverter structure using the load-transistor's overlap capacitance as the bootstrapped capacitor is applied. Finally, the propagation delay time of 0.94ns/stage for a supply voltage of 9V is achieved in the 5-stage ring oscillator, which is over 75times faster than previous report.

引用

页码：81 / 84

页数：4