Features of the Properties of Rare-Earth Semiconductors

被引：2

作者：

Kaminski, V. V. ^{[1
]}

Sharenkova, N. V. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 02期

关键词：

D O I：

10.1134/S106378261902012X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4f shells in the electronic structure of the elements.

引用

页码：150 / 152

页数：3

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[1] Features of the Properties of Rare-Earth Semiconductors
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