Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film

被引：6
|
作者：
Shin, Sang Yeol [1 ]
Golovchak, Roman [2 ]
Lee, Suyoun [3 ]
Cheong, Byung-ki [3 ]
Jain, Himanshu [4 ]
Choi, Yong Gyu [1 ]
机构：
[1] Korea Aerosp Univ, Dept Mat Sci & Engn, Gyeonggi 412791, South Korea
[2] Austin Peay State Univ, Dept Phys & Astron, Clarksville, TN 37044 USA
[3] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
[4] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
来源：
SCRIPTA MATERIALIA | 2014年 / 86卷
基金：
美国国家科学基金会; 新加坡国家研究基金会;
关键词：
Amorphous chalcogenide film; EXAFS; Electrical properties; Switching devices; PHASE-CHANGE MATERIALS; ABSORPTION FINE-STRUCTURE; THIN-FILMS; OPTICAL-PROPERTIES; LOCAL-STRUCTURE; ALLOYS; MICROSCOPY; EXAFS;
D O I：
10.1016/j.scriptamat.2014.05.008
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We employ EXAFS spectroscopy to refine the local atomic arrangements of evaporation-deposited equiatomic GeSe film. Amorphous structure of the as-deposited GeSe film turns out to satisfy mainly the 4:2 structural model. The crystallized GeSe film, however, consists of the orthorhombic GeSe crystals with the 3:3 atomic arrangements and quasi-crystalline Ge clusters. Its temperature-dependent electrical resistance is explained in connection with this structural difference, which exemplifies significance of the chemical environments on the electrical switching phenomena observed from amorphous chalcogenide solids. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：56 / 59
页数：4
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