Zitterbewegung in a Graphene-Boron Nitride Bilayer

被引：0
|
作者：
Konobeeva, N. N. [1 ]
Belonenko, M. B. [2 ]
机构：
[1] Volgograd State Univ, Volgograd, Russia
[2] Volgograd Business Inst, Volgograd, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2013年 / 56卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
graphene; boron nitride; extremely short pulses;
D O I：
10.1007/s11182-013-0120-7
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study we investigate the Zitterbewegunq (ZB) (jitter motion) effect in a thin film formed by graphene grown on a boron nitride substrate in the presence of a terahertz pump pulse, where the conduction electrons are described on the basis of the long-wavelength effective Hamiltonian in the case of low temperatures. An analytical expression is obtained which describes the current induced by the motion of the wave packet of electrons. The dipole radiation is calculated.
引用
收藏
页码：930 / 936
页数：7
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