Femtosecond Laser Processing and Evaluation of Broadband THz Anti-Reflection Structures

被引：0
|
作者：
Sakurai, Haruyuki [1 ]
Nemoto, Natsuki [1 ]
Konishi, Kuniaki [1 ]
Takaku, Ryota [1 ]
Sakurai, Yuki [1 ]
Katayama, Nobuhiko [1 ]
Matsumura, Tomotake [1 ]
Yumoto, Junji [1 ]
Kuwata-Gonokami, Makoto [1 ]
机构：
[1] Univ Tokyo, Bunkyo Ku, Tokyo 1130033, Japan
来源：
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年
关键词：
SILICON;
D O I：
10.1109/irmmw-thz.2019.8873935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricate terahertz anti-reflection structures on the surface of high-resistivity silicon via femtosecond laser processing. We measure its spectral properties by terahertz time-domain spectroscopy, and find a broadband increase in transmissivity over 0.3 - 2.5 THz. We investigate the observed spectral characteristics of this transmission by using numerical simulation. We successfully reproduce the observed result for all frequencies, including a previously undocumented high-frequency drop-off, when the model includes additional material losses. We believe these effects to be induced by the laser-ablation fabrication process.
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页数：2
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