Impact of quantum mechanical tunneling on off-leakage current in double-gate MOSFET using a quantum drift-diffusion model

被引：0

作者：

Jaud, MA ^{[1
]}

Barraud, S ^{[1
]}

Le Carval, G ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年

关键词：

simulation; density-gradient; Schrodinger; source-to-drain tunneling; off-leakage current; double-gate MOSFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the growing use of wireless electronic systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S-D) have recently shown that it will become detrim(1) ental in bulk MOSFET architecture for channel lengths around 5nm and at low temperature (less than or equal to100K) [1]. In this paper we investigate, using a 2D quantum drift-diffusion model, the influence of source-to-drain tunneling on off-state-leakage current in double-gate MOSFETs. It is shown that in double-gate MOSFET architecture (contrary to bulk architecture) quantum tunnel current component will be a non negligible part of the off-state leakage current for ultra-thin film thicknesses, even at room temperature.

引用

页码：17 / 20

页数：4

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