Molecular control of silicon-porous silicon-metal junctions

被引：0

作者：

Rabinal, MK ^{[1
]}

Mulimani, BG ^{[1
]}

Narasimhan, KL ^{[1
]}

机构：

[1] Karnatak Univ, Dept Phys, Dharwad 580003, Karnataka, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We attempt to understand the charge transport in Stable Silicon-Porous Silicon-Organic Molecules-Metal Devices. These are produced by surface modification of Porous Silicon by 1-Dodecyne molecules. The charge transport measurements (Current-Voltage) are made both for gold and aluminum as top contacts. Devices with aluminum show better rectification compared to gold, in the former the charge transport is dominated by the tunneling process (Fowler-Nordheim type). We propose a new band structure model to explain the present results.

引用

页码：379 / 382

页数：4

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