Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(001) thin films

被引：5
|
作者：
Sharma, A. [1 ]
Tripathi, S. [1 ]
Brajpuriya, R. [1 ]
Chaudhari, S. M. [1 ]
机构：
[1] Univ Grant Commiss, Dept Atom Energy Consortium Sci Res, Indore 452017, India
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 24期
关键词：
GaAs; interface; annealing; structural; magnetic;
D O I：
10.1016/j.apsusc.2005.11.079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(001) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (002) direction. However, the sample annealed at higher temperatures shows formation of ternary Co2GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co2GaAs phase at the interface. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：8571 / 8575
页数：5
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