Collective radical oligomerisation induced by an STM tip on a silicon surface

被引:8
|
作者
Geagea, Elie [1 ]
Jeannoutot, Judicael [1 ]
Feron, Michel [1 ]
Palmino, Frank [1 ]
Thomas, Christophe M. [2 ]
Rochefort, Alain [3 ,4 ]
Cherioux, Frederic [1 ]
机构
[1] Univ Bourgogne Franche Comte, CNRS, UFC, FEMTO ST, 15B Ave Montboucons, F-25030 Besancon, France
[2] PSL Univ, Inst Rech Chim Paris, CNRS, Chim ParisTech, F-75005 Paris, France
[3] Polytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
[4] CQCAM, CQMF, Montreal, PQ H3C 3A7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
DISSOCIATIVE ELECTRON-ATTACHMENT; POLYMERIZATION; ETHERS; MOLECULES; NETWORKS;
D O I
10.1039/d0nr08291k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Over the past decade, on-surface fabrication of organic nanostructures has been widely investigated for the development of molecular electronic components, catalysts, and new materials. Here, we introduce a new strategy to obtain alkyl oligomers in a controlled manner using on-surface radical oligomerisations that are triggered by electrons between the tip of a scanning tunnelling microscope and the Si(111)root 3 x root 3 R30 degrees-B surface. This electron transfer event only occurs when the bias voltage is below -4.5 V and allows access to reactive radical species under exceptionally mild conditions. This transfer can effectively 'switch on' a sequence leading to the formation of oligomers of defined size distribution thanks to the on-surface confinement of the reactive species. Our approach enables new ways to initiate and control radical oligomerisations with tunnelling electrons, leading to molecularly precise nanofabrication.
引用
收藏
页码:349 / 354
页数:6
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