Performance Analysis of Planar Heterojunction Perovskite Solar Cell Featuring Double Hole Transport Layer & Backplane

Perovskite photovoltaic cells have attracted appreciable importance from many researchers in the recent decade due to its reduced thickness, very less fabrication cost, and impressive photovoltaic performance. In this work, the authors investigated the simulation-based performance analysis of solar cells with perovskite CH3NH3PbI3 material. In the given paper authors have proposed the design of SnO2 (electron transport layer)/ CH3NH3PbI3 (active layer)/ SiGe and Spiro-OMeTAD (hole transport layers)/ SiGeSn (Backplane) based solar cell may be grown on the glass substrate. The simulation of the predicted device is compared with the already existing perovskite solar cell performance parameters and comparatively higher conversion efficiency was obtained for the proposed structure. In this proposed work, the consequence of perovskite layer thickness, different doping concentrations of perovskite (active) layer, hole transport layers (HTLs), Ge mole fraction of SiGe hole transport layer, hole mobility of Spiro-OMeTAD layer and backplanes on the characteristic performance of the proposed solar cell have been analyzed. The maximum conversion efficiency of 28.57% is reported for the given structure, having an amalgamation of two non-identical hole transport layers which ensures considerable photon conversion efficiency. Hence, this current work would propose a stepping stone in the advancement of high-performance perovskite photovoltaic cells in comparison with the pre-existing ones.